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iimveliso

ABB 5SHY4045L0001 3BHB018162 Imodyuli yoMguquli webhodi yeIGCT

inkcazelo emfutshane:

Inombolo yomthetho: ABB 5SHY4045L0001 3BHB018162

uphawu: ABB

ixabiso: $15000

Ixesha lokuhambisa: Kwi-Stock

Intlawulo: T/T

izibuko lokuthutha: xiamen


Iinkcukacha zeMveliso

Iithegi zeMveliso

Inkcazo

Ukwenziwa ABB
Umzekelo 5SHY4045L0001
Ukuodola ulwazi 3BHB018162
Ikhathalogu VFD Spares
Inkcazo ABB 5SHY4045L0001 3BHB018162 Imodyuli yoMguquli webhodi yeIGCT
Imvelaphi eMelika (US)
Ikhowudi ye-HS 85389091
Ubungakanani 16cm*16cm*12cm
Ubunzima 0.8kg

Iinkcukacha

I-5SHY4045L0001 3BHB018162R0001 yimveliso ye-thyristor (IGCT) yesango edibeneyo ye-ABB, eyeye-5SHY series.

I-IGCT luhlobo olutsha lwesixhobo sombane esavela ekupheleni koo-1990.

Idibanisa iingenelo ze-IGBT (i-insulated gate bipolar transistor) kunye ne-GTO (isango lokuvala i-thyristor), kwaye ineempawu zesantya sokutshintsha ngokukhawuleza, umthamo omkhulu, kunye namandla amakhulu okuqhuba afunekayo.

Ngokukodwa, umthamo we-5SHY4045L0001 3BHB018162R0001 ulingana ne-GTO, kodwa isantya sayo sokutshintsha siphindwe ka-10 ngokukhawuleza kune-GTO, oku kuthetha ukuba inokugqiba isenzo sokutshintsha ngexesha elifutshane kwaye ngaloo ndlela iphucule ukuguqulwa kwamandla.

Ukongeza, xa kuthelekiswa ne-GTO, i-IGCT inokugcina isekethe enkulu kunye neyinkimbinkimbi ye-snubber, enceda ukwenza lula uyilo lwenkqubo kunye nokunciphisa iindleko.

Nangona kunjalo, kufuneka kuqatshelwe ukuba nangona i-IGCT ineenzuzo ezininzi, amandla okuqhuba afunekayo asemakhulu.

Oku kunokonyusa ukusetyenziswa kwamandla kunye nobunzima benkqubo. Ukongeza, nangona i-IGCT izama ukutshintsha i-GTO kwizicelo ezinamandla kakhulu, isajongene nokhuphiswano oluqatha oluvela kwezinye izixhobo ezitsha (ezifana ne-IGBT)

I-5SHY4045L00013BHB018162R0001 Isango elidityanisiweyo le-transistors|GCT (I-Intergrated Gate commutated transistors) sisixhobo esitsha sesemiconductor samandla esisetyenziswe kwisixhobo esikhulu sombane samandla esaphuma ngo-1996.

I-IGCT sisixhobo esitsha sokutshintsha semiconductor yamandla aphezulu esekelwe kwisakhiwo se-GTO, usebenzisa isakhiwo sesango esihlanganisiweyo sesango elinzima, usebenzisa i-buffer medium layer structure kunye ne-anode transparent emitter technology, eneempawu ezikwimeko ye-thyristor kunye neempawu zokutshintsha ze-transistor.

5SHY4045L000) 3BHBO18162R0001 isebenzisa isakhiwo se-buffer kunye neteknoloji ye-emitter engajulile, enciphisa ilahleko eguquguqukayo malunga ne-50%.

Ukongeza, olu hlobo lwezixhobo lukwadibanisa i-diode ye-freewheeling eneempawu ezintle eziguquguqukayo kwi-chip, kwaye emva koko iqonde indibaniselwano ye-organic ye-low on-state voltage drop, i-voltage ephezulu yokuthintela kunye neempawu zokutshintsha ezizinzileyo ze-thyristor ngendlela ekhethekileyo.

5SHY4045L0001


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